OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. —

1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747

FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue A

03/09

Page 1 of 3

High Reliability Hermetic Infrared Emitting Diode

OP235, OP236 (TX, TXV)

Description:

Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic

metal TO-46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher

radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches

the spectral response of silicon phototransistors. Devices have lens cans that provide an 18° beam angle

between half power points, which facilitates the easy design of beam interrupt applications with the OP804 and

OP805 series of high reliability phototransistors.

TX and TXV devices are processed to OPTEK’s military screening program patterned after MIL-PRF-19500. After

100% screening, Group A and B are performed on every lot and a Group C test is performed every six months.

Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.

Contact your local representative or OPTEK for more information.

Features:

device

Applications:

Part

Number

LED

Peak

Wavelength

Output Power

(mW/cm

Min / Max

Typ / Max

Total

Beam

Angle

Lead

Length

OP235TX

890 nm

1.5 / NA

50 / 100

18°

0.50"

OP235TXV

OP236TX

3.5 / NA

OP236TXV

2

1

Pin #

LED

Sensor

1

Anode

Collector / Cathode

2

Cathode

Emitter / Anode

DIMENSIONS ARE IN:

INCHES

[ MILLIMETERS]