BC847C datasheet(2/3 Pages) DIODES

Numer części	BC847C

Szczegółowy opis	NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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Producent	DIODES [Diodes Incorporated]

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DS11108 Rev. 14 - 2

2 of 3

BC846A-BC848C

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage (Note 3)

BC846

BC847

BC848

V(BR)CBO

80

50

30

—

V

IC = 10

mA, IB = 0

Collector-Emitter Breakdown Voltage (Note 3) BC846

BC847

BC848

V(BR)CEO

65

45

30

—

V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

BC846, BC847

(Note 3)

BC848

V(BR)EBO

6

5

——

V

IE = 1

mA, IC = 0

H-Parameters

Small Signal Current Gain

Current Gain Group A

B

C

Input Impedance

Current Gain Group A

B

C

Output Admittance

Current Gain Group A

B

C

Reverse Voltage Transfer Ratio

A

Current Gain Group

B

C

hfe

hie

hoe

hre

—

220

330

600

2.7

4.5

8.7

18

30

60

1.5x10-4

2x10-4

3x10-4

—

k

W

k

W

k

W

µS

—

VCE = 5.0V, IC = 2.0mA,

f = 1.0kHz

DC Current Gain

Current Gain Group A

B

(Note 3)

C

hFE

110

200

420

180

290

520

220

450

800

—

VCE = 5.0V, IC = 2.0mA

Collector-Emitter Saturation Voltage (Note 3)

VCE(SAT)

—

90

200

250

600

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Saturation Voltage (Note 3)

VBE(SAT)

—

700

900

—mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Voltage (Note 3)

VBE(ON)

580

—

660

—

700

770

mV

VCE = 5.0V, IC = 2.0mA

VCE = 5.0V, IC = 10mA

Collector-Cutoff Current (Note 3)

BC846

BC847

BC848

ICES

ICBO

—

15

5.0

nA

µA

VCE = 80V

VCE = 50V

VCE = 30V

VCB = 40V

VCB = 30V, TA = 150°C

Gain Bandwidth Product

fT

100

300

—

MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

Collector-Base Capacitance

CCBO

—3.0

—

pF

VCB = 10V, f = 1.0MHz

Noise Figure

NF

—

2

10

dB

VCE = 5V, IC = 200µA,

RS = 2.0k

W,

f = 1.0kHz,

Df = 200Hz

Notes:

3. Short duration pulse test used to minimize self-heating effect.

Podobny numer części - BC847C

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NXP Semiconductors	BC847C	84Kb / 13P	45 V, 100 mA NPN general-purpose transistors Rev. 8-20 August 2012
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