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MTB80N08J3 Arkusz danych(PDF) 3 Page - Cystech Electonics Corp. |
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MTB80N08J3 Arkusz danych(HTML) 3 Page - Cystech Electonics Corp. |
3 / 9 page CYStech Electronics Corp. Spec. No. : C909J3 Issued Date : 2013.04.01 Revised Date : 2013.12.30 Page No. : 3/ 9 MTB80N08J3 CYStek Product Specification Characteristics (Tj=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 80 - - V VGS=0V, ID=250μA ∆BVDSS/∆Tj - 0.07 - V/ °C Reference to 25 °C, ID=250μA VGS(th) 1 1.9 2.5 V VDS = VGS, ID=250μA *GFS - 17 - S VDS =5V, ID=15A IGSS - - ± 100 nA VGS=±25V - - 1 VDS =64V, VGS =0V IDSS - - 10 μA VDS =64V, VGS =0V, Tj=125 °C - 59.6 80 VGS =10V, ID=15A *RDS(ON) - 60.5 90 mΩ VGS =4.5V, ID=10A Dynamic *Qg - 20 - *Qgs - 6.9 - *Qgd - 3.3 - nC VDD=40V, ID=15A,VGS=10V *td(ON) - 36 - *tr - 24 - *td(OFF) - 56 - *tf - 47 - ns VDD=40V, ID=15A, VGS=10V, RG=6Ω Ciss - 1748 - Coss - 50 - Crss - 37 - pF VGS=0V, VDS=25V, f=1MHz Source-Drain Diode *IS - - 15 *ISM - - 60 A *VSD - 0.87 1 V IS=15A, VGS=0V *trr - 60 - ns *Qrr - 90 - nC VGS=0, IF=15A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint |
Podobny numer części - MTB80N08J3 |
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Podobny opis - MTB80N08J3 |
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