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2SD1479 Arkusz danych(PDF) 2 Page - Savantic, Inc. |
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2SD1479 Arkusz danych(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1479 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=1A 1.5 V VCB=750V; IE=0 50 µA ICBO Collector cut-off current VCB=1500V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 50 µA hFE DC current gain IC=2A ; VCE=5V 2 5 ts Storage time 9.0 µs tf Fall time IC=2.5A IBend=1.1A,LB=10µH 1.0 µs |
Podobny numer części - 2SD1479 |
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Podobny opis - 2SD1479 |
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