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TA44914W Arkusz danych(PDF) 3 Page - Dynex Semiconductor |
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TA44914W Arkusz danych(HTML) 3 Page - Dynex Semiconductor |
3 / 12 page TA449..W 3/12 GATE TRIGGER CHARACTERISTICS AND RATINGS V DWM = 12V, RL = 3Ω, Tcase = 25 oC Min. Max. Units Conditions Parameter Symbol V GT Gate trigger voltage V DWM = 12V, RL = 3Ω, Tcase = 25 oC I GT Gate trigger current -5 V - 400 mA V RGM Peak reverse gate voltage I FGM Peak forward gate current - P GM Peak gate power - -5 V -4 A -16 W -3 W - Average time 10ms max P G(AV) Average gate power V GD Min. non trigger voltage - 0.2 V - |
Podobny numer części - TA44914W |
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Podobny opis - TA44914W |
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