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TA449XXW Arkusz danych(PDF) 11 Page - Dynex Semiconductor |
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TA449XXW Arkusz danych(HTML) 11 Page - Dynex Semiconductor |
11 / 12 page TA449..W 11/12 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 6.3 Cathode tab Gate Ø1.5 Ø19nom 2 holes 3.6 x 2.0 deep (in both electrodes) Cathode Anode Ø19nom Ø 42 max Ø 38 max Nominal weight: 50g Clamping force: 3.5kN ±10% Lead length: 250mm Package outine type code: MU86 ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Gate triggering and the use of gate characteristics AN4840 Recommendations for clamping power semiconductors AN4839 The effect of temperature on thyristor performance AN4870 Thyristor and diode measurement with a multi-meter AN4853 Turn-on performance of thyristors in parallel AN4999 Use of V TO , r T on-state characteristic AN5001 |
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