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ES25A Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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ES25A Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente ES25A 600 V 2.0 Amp High Efficiency Recovery Rectifiers 19-Jun-2013 Rev. C Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Glass passivated chip MECHANICAL DATA Case: Molded plastic SMA/DO-214AC Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-750 method 2026 Polarity: Color band denotes cathode Mounting position: Any Weight: 0.064 gram PACKAGE INFORMATION Package MPQ Leader Size SMA 5K 13’ inch MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Parameter Symbol Rating Unit Maximum Repetitive Peak Reverse Voltage VRRM 600 V Maximum RMS Voltage VRMS 420 V Maximum DC Blocking Voltage VDC 600 V Maximum Average Forward Rectified TA=90°C IF 2 A Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load IFSM 60 A Maximum Instantaneous Forward Voltage @ 2.0A VF 1.7 V TA=25°C 5 Maximum DC Reverse Current at Rated DC Blocking Voltage TA=100°C IR 100 μA Maximum Reverse Recovery Time 1 TRR 35 nS Typical Thermal Resistance 3 RθJA 55 °C / W Typical Junction Capacitance 2 CJ 50 pF Operating & Storage Temperature TJ,TSTG -55~150 °C Notes: 1. Reverse Recovery Time test condition:IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3. Thermal Resistance junction to ambient. SMA A B E G D F C H Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.24 1.65 E - 0.203 B 3.99 4.60 F 4.80 5.28 C 2.50 2.90 G 0.76 1.52 D 1.98 2.44 H 0.15 0.305 |
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