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Zakładka z wyszukiwarką danych komponentów |
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KSD1621 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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KSD1621 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com KSD1621 Rev. B3 1 August 2009 KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Absolute Maximum Ratings T A = 25°C unless otherwise noted Mounted on Ceramic Board (250mm2 x 0.8mm) Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 2 A PC Collector Power Dissipation (TA = 25°C) Derating Rate above 25°C 500 4 mW mW/ °C TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C SOT-89 1 1. Base 2. Collector 3. Emitter 16 2 1 PY W W hFE grade Year code Weekly code Marking |
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