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SI2365EDS Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SI2365EDS Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si2365EDS Document Number: 63199 S13-1505-Rev. C, 01-Jul-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com P-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Power Management for Portable and Consumer - Load Switches - DC/DC Converters Notes: a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) a Qg (Typ.) - 20 0.0320 at VGS = - 4.5 V - 5.9 13.8 nC 0.0410 at VGS = - 2.5 V - 5.2 0.0675 at VGS = - 1.8 V - 4.3 Ordering Information: Si2365EDS-T1-GE3 (Lead (Pb)-free and Halogen-free) TO-236 (SOT-23) Top View * Marking Code Si2365EDS (H5)* 1 2 3 G S D S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 5.9 A TC = 70 °C - 4.7 TA = 25 °C - 4.5b, c TA = 70 °C - 3.6b, c Pulsed Drain Current (t = 300 µs) IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C IS - 1.4 TA = 25 °C - 1b, c Maximum Power Dissipation TC = 25 °C PD 1.7 W TC = 70 °C 1.1 TA = 25 °C 1b, c TA = 70 °C 0.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 5 s RthJA 100 130 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75 |
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