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SI7459DP Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SI7459DP Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Vishay Siliconix Si7459DP Document Number: 72631 S09-0273-Rev. D, 16-Feb-09 www.vishay.com 1 P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile APPLICATIONS • Battery and Load Switching - Notebook Computers - Notebook Battery Packs PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) - 30 0.0068 at VGS = - 10 V - 22 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK SO-8 Bottom View Ordering Information: Si7459DP-T1-E3 (Lead (Pb)-free) Si7459DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET G S D Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 25 Continuous Drain Current (TJ = 150°C) a TA = 25 °C ID - 22 - 13 A TA = 70 °C - 17 - 10 Pulsed Drain Current IDM - 60 Continuous Source Current (Diode Conduction)a IS - 4.5 - 1.6 Maximum Power Dissipationa TA = 25 °C PD 5.4 1.9 W TA = 70 °C 3.4 1.2 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)b,c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 18 23 °C/W Steady State 52 65 Maximum Junction-to-Case (Drain) Steady State RthJC 1.0 1.5 |
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