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2SJ243 Arkusz danych(PDF) 3 Page - NEC

Numer części 2SJ243
Szczegółowy opis  P-CHANNEL MOS FET FOR SWITCHING
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Producent  NEC [NEC]
Strona internetowa  http://www.nec.com/
Logo NEC - NEC

2SJ243 Arkusz danych(HTML) 3 Page - NEC

  2SJ243 Datasheet HTML 1Page - NEC 2SJ243 Datasheet HTML 2Page - NEC 2SJ243 Datasheet HTML 3Page - NEC 2SJ243 Datasheet HTML 4Page - NEC 2SJ243 Datasheet HTML 5Page - NEC 2SJ243 Datasheet HTML 6Page - NEC  
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2SJ243
3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
TC - Case Temperature - ˚C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0
240
TA - Ambient Temperature - ˚C
TRANSFER CHARACTERISTICS
–1.0
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
–0.5
400
ID - Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
0
30
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
–0.3
120
ID - Drain Current - mA
0
200
160
120
80
40
30
60
90
120
150
180
–10
–1
–0.1
–0.01
100
30
3
1
–1.0
–3.0
–10
–30
–200
80
60
40
20
20
40
60
80
100
120
140
160
–0.001
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
VDS = –3 V
Pulsed
150 ˚C
TA = –25 ˚C
25 ˚C
75 ˚C
–100
–25 ˚C
TA = 75 ˚C
25 ˚C
150 ˚C
VDS = –3 V
Pulsed
20
10
ID = –0.1 A
ID = –10 mA
–1
–2
–3
–4
–5
–6
–7
–8
–0.6
–1
–2
–5
–10
75 ˚C
150 ˚C
25 ˚C
TA = –25 ˚C
100
80
60
40
20
Pulsed
VGS = –2.5 V
Pulsed
210
–100
10
3.0 cm2
× 0.64 mm
Using ceramic substrate


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