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TIP147TTU Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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TIP147TTU Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP145T/146T/147T Rev. C 1 August 2008 TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) • Industrial Use • Complement to TIP140T/141T/142T Absolute Maximum Ratings * T C=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Parameter Value Units BVCBO Collector-Base Voltage : TIP145T : TIP146T : TIP147T - 60 - 80 - 100 V V V BVCEO Collector-Emitter Voltage : TIP145T : TIP146T : TIP147T - 60 - 80 - 100 V V V BVEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 10 A ICP Collector Current (Pulse) - 15 A IB Base Current (DC) - 0.5 A PC Collector Dissipation (TC=25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Junction Temperature Range - 65 ~ 150 °C TO-220 1 1.Base 2.Collector 3.Emitter Equivalent Circuit B E C R1 R2 R1 8k Ω ≅ R2 0.12k Ω ≅ |
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