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STP10NM60ND Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STP10NM60ND Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 19 page STD10NM60ND, STF10NM60ND, STP10NM60ND Electrical ratings Doc ID 18467 Rev 2 3/19 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit DPAK TO-220FP TO-220 VDS Drain-source voltage 600 V VGS Gate- source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 8 8 (1) 1. Limited by maximum junction temperature. 8A ID Drain current (continuous) at TC = 100 °C 5 5 (1) 5A IDM (2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 32 32 (1) 32 A PTOT Total dissipation at TC = 25 °C 70 25 70 W dv/dt(3) 3. ISD ≤8 A, di/dt ≤400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS. Peak diode recovery voltage slope 40 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 2500 V TJ Tstg Operating junction temperature Storage temperature - 55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit DPAK TO-220FP TO-220 Rthj-case Thermal resistance junction-case max 1.79 5 1.79 °C/W Rthj-amb Thermal resistance junction-ambient max 62.50 62.50 °C/W Rthj-pcb Thermal resistance junction-pcb max 50 °C/W TJ Maximum lead temperature for soldering purpose 300 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAS Avalanche current, repetitive or not- repetitive (pulse width limited by Tj Max) 2.5 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) 130 mJ |
Podobny numer części - STP10NM60ND |
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Podobny opis - STP10NM60ND |
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