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UF2820P Arkusz danych(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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UF2820P Arkusz danych(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
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1 / 3 page  1 RF Power MOSFET Transistor 20W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant UF2820P • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features • N-channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • Common source configuration • Lower noise floor ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Rating Drain-Source Voltage 65 Gate-Source Voltage 20 Drain-Source Current 2.8 Power Dissipation 53 Junction Temperature 200 Storage Temperature -55 to 150 Thermal Resistance 3.3 Symbol VDS VGS IDS PD TJ TSTG θJC Units V V A W °C °C °C/W ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BVDSS 65 - V VGS = 0.0 V , IDS = 4.0 mA Drain-Source Leakage Current IDSS - 2.0 mA VGS = 28.0 V , VGS = 0.0 V Gate-Source Leakage Current IGSS - 2.0 µA VGS = 20.0 V , VDS = 0.0 V Gate Threshold Voltage VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 200.0 mA Forward Transconductance GM .160 - S VDS = 10.0 V , IDS 200.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 14 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 10 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 4.8 pF VDS = 28.0 V , F = 1.0 MHz Power Gain GP 10 - dB VDD = 28.0 V, IDQ = 200.0 mA, POUT = 20.0 W F =500 MHz Drain Efficiency ŋD 50 - % VDD = 28.0 V, IDQ = 200.0 mA, POUT = 20.0 W F =500 MHz Load Mismatch Tolerance VSWR-T - 20:1 - VDD = 28.0 V, IDQ = 200.0 mA, POUT = 20.0 W F =500 MHz F (MHz) ZIN (Ω) ZLOAD (Ω) 100 9.5-j60.0 4.0+j68.0 300 5.0-j35.0 40.0+j48.0 500 2.0-j22.0 36.0+j34.0 VDD=28V, IDQ=200 mA, POUT =20.0 W TYPICAL DEVICE IMPEDANCES ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. Package Outline |
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