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TIP32 Arkusz danych(PDF) 3 Page - Nell Semiconductor Co., Ltd |
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TIP32 Arkusz danych(HTML) 3 Page - Nell Semiconductor Co., Ltd |
3 / 5 page SEMICONDUCTOR Nell High Power Products RoHS RoHS Fig.5 Active region safe operating area 1.0 Fig.4 Turn-off time Collector-emitter voltage , V (V) CE Page 3 of 5 www.nellsemi.com 10 0.5 5.0 0.1 0.2 1.0ms Fig.7 Dc current gain 0.03 0.05 0.1 Collector current, I (A) C 0.3 1.0 3.0 Collector emitter , I (A) C TIP31 (NPN) Series TIP32 (PNP) Series TIP31A,TIP32A TIP31B,TIP32B TIP31C,TIP32C Second Breakdown Limited @ T ≤ 150 ˚C J Thermal limit @ T = 25 ˚C J Bonding wire limit CURVES APPLY BELLOW RATED VCEO 5.0ms 5.0 10 20 50 100 2.0 I = I B1 B2 I / I = 10 C B t ’ = t - 1/8t S S f T = 25°C J t ’ S t @ V = 30V f CC t @ V = 10V f CC 0.2 0.1 0.05 0.03 3.0 1.0 0.5 0.3 0.07 2.0 0.7 0.1 0.05 0.03 0.07 0.2 0.3 0.5 0.7 1.0 3.0 2.0 T = 150 °C J 25 °C -55 °C V = 2.0V CE 7.0 100 50 70 10 300 5.0 30 500 There are two limitations on the power handling ability of a tr ansisto r: avera ge juncti on te mpera tu re and second breakdown. Sa fe operating area curves indicate l -V C CE limits of the tra nsistor that must be observe d for re liable op er at ion ; i.e. , the mus t no t be sub jec ted to tran sistor The data of fi g.5 is based on T = 150°C; T is vari able J(p k) C depending on conditi ons. Second bre akdown pulse limits are valid fo r duty cycles to 10% pro vided T ≤ 150 °C T may be J(p k) J(p k) Collector Current, l (A) C Fig.3 Turn-on time 0.02 0.1 0.3 0.1 0.05 0.03 3.0 1.0 0.5 0.05 0.07 0.7 1.0 2.0 I /I = 10 C B T = 25 °C J t @ V = 30V r CC t @ V = 10V r CC t @ V = 2.0V d EB(off) 0.03 0.3 0.5 Fig.6 Capacitance 100 50 70 30 0.1 0.2 0.5 1.0 2 5 10 200 300 Ceb Ccb T = +25 °C J 0.3 3 7 40 Reverse voltage, V (V) R (Single pulse) 100µs 20 30 calulated form the data in Figure 13. At high case temperatures, thermal limitations will reduce the power that can be handled to valuesless than the limitations by second breakdown. |
Podobny numer części - TIP32 |
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Podobny opis - TIP32 |
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