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TIP36 Arkusz danych(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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TIP36 Arkusz danych(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 3 page FEATURES APPLICATIONS SEMICONDUCTOR RoHS RoHS Complementary Silicon Power Transistor Nell High Power Products TIP35 (NPN) Series TIP36 (PNP) Series ABSOLUTE MAXIMUM RATINGS (T = 25°C) C UNIT V PC Tstg PARAMETER Collector to emitter voltage (I = 0) B ºC 5 25 Collector current Base current Collector power dissipation (Derate above 25 °C) Junction temperature 40 125 (1.0) 5 VALUE 40 VCBO Tj -65 to 150 150 A Collector to base voltage (I = 0) E Emitter to base voltage (I = 0) C SYMBOL VCEO VEBO IC IB Storage temperature W(W/ °C) 15.6±0.4 9.6 2 3 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 Φ3.2 0,1 ± 4.8±0.2 2.0±0.1 0.65 +0.2 -0.1 1.4 B C E 1 2 3 Page 1 of 3 www.nellsemi.com All dimensions in millimeters TO-3P(B) 40 Collector peak current (t < 0.3mS) p ICM C B E C B E TIP36(PNP) TIP35(NPN) Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Audio amplifier General purpose switching and amplifier 25A/40~100V/125W Collector - Emitter Saturation Voltage: V = 1.8V (MAX.) @ I = 15A CE(sat) dc C Collector - Emitter Saturation Voltage: V = 40V (Min.) - TIP35,TIP36 CEO(sus) dc = 60V (Min.) - TIP35A,TIP36A dc = 80V (Min.) - TIP35B, TIP36B dc = 100V (Min.) - TIP35C, TIP36C dc DC Current Gain h = 25 (Min.) @ I = 1.5A FE c High Current Gain - Bandwidth product f = 3.0 MHz (Min.) @ I =1.0A T c TIP35 TIP36 TIP35A TIP36A TIP35B TIP36B TIP35C TIP36C 60 60 80 80 100 100 90 mJ E Unclamped inductive load energy (Note 1) Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of: L = 20mH, I = 0.4A, R = 100Ω, V = 0, R = 0.1Ω, V = 20V B(on) BE BE(off) S CC 3.5 (0.028) @T = 25 °C C @T = 25 °C A |
Podobny numer części - TIP36 |
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Podobny opis - TIP36 |
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