FQPF8N60CT datasheet(1/8 Pages) FAIRCHILD

Numer części	FQPF8N60CT

Szczegółowy opis	N-Channel QFET짰 MOSFET 600 V, 7.5 A, 1.2 廓

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Producent	FAIRCHILD [Fairchild Semiconductor]

Strona internetowa	http://www.fairchildsemi.com

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November 2013

FQPF8N60C

N-Channel QFET® MOSFET

600 V, 7.5 A, 1.2 Ω

Description

FQPF8N60C Rev. C0

www.fairchildsemi.com

1

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild s proprietary,

planar stripe,

DMOS technology. This advanced

technology has been especially tailored to minimize on-

state resistance, provide superior switching performance,

and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high

efficiency switched mode power supplies, active power

factor correction, electronic lamp ballasts based on half

bridge topology.

Features

Absolute Maximum Ratings T

C = 25

oC unless otherwise noted.

TO-220F

G

DS

G

S

D

•

7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V,

ID = 3.75 A

• Low

Gate Charge (Typ. 28 nC)

• Low Crss (

Typ. 12 pF)

• 100%

Avalanche Tested

Thermal Characteristics

Symbol

Parameter

FQPF8N60C

Unit

RθJC

Thermal Resistance, Junction-to-Case

, Max.

2.6

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

, Max.

62.5

°C/W

* Drain current limited by maximum junction temperature.

Symbol

Parameter

FQPF8N60C

Unit

VDSS

Drain-Source Voltage

600

V

ID

Drain Current

- Continuous (TC = 25°C)

7.5 *

A

- Continuous (TC = 100°C)

4.6 *

A

IDM

Drain Current

- Pulsed

(Note 1)

30 *

A

VGSS

Gate-Source Voltage

± 30

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

230

mJ

IAR

Avalanche Current

(Note 1)

7.5

A

EAR

Repetitive Avalanche Energy

(Note 1)

14.7

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

PD

Power Dissipation (TC = 25°C)

48

W

- Derate above 25°C

0.38

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Podobny numer części - FQPF8N60CT

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Fairchild Semiconductor	FQPF8N60C	927Kb / 10P	600V N-Channel MOSFET
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