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IRF630S Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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IRF630S Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91032 2 S11-1047-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12). c. ISD 9.0 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). . Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mount)c RthJA -- 40 °C/W Maximum Junction-to-Ambient RthJA -- 62 Maximum Junction-to-Case (Drain) RthJC -- 1.7 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 200 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA -0.24 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 μA VDS = 160V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 5.4 Ab - - 0.40 Forward Transconductance gfs VDS = 50 V, ID = 5.4 Ab 3.8 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 -800 - pF Output Capacitance Coss -240 - Reverse Transfer Capacitance Crss -76 - Total Gate Charge Qg VGS = 10 V ID = 5.9 A, VDS = 160 V see fig. 6 and 13b -- 43 nC Gate-Source Charge Qgs -- 7.0 Gate-Drain Charge Qgd -- 23 Turn-On Delay Time td(on) VDD = 100 V, ID = 5.9 A Rg = 12 , RD= 16 see fig. 10b -9.4 - ns Rise Time tr -28 - Turn-Off Delay Time td(off) -39 - Fall Time tf -20 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - D S G |
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