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IRF630S Arkusz danych(PDF) 2 Page - Vishay Siliconix

Numer części IRF630S
Szczegółowy opis  Power MOSFET
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRF630S Arkusz danych(HTML) 2 Page - Vishay Siliconix

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Document Number: 91032
2
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12).
c. ISD  9.0 A, dI/dt  120 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
.
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
(PCB Mount)c
RthJA
--
40
°C/W
Maximum Junction-to-Ambient
RthJA
--
62
Maximum Junction-to-Case (Drain)
RthJC
--
1.7
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 μA
200
-
-
V
VDS Temperature Coefficient
VDS/TJ
Reference to 25 °C, ID = 1 mA
-0.24
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 200 V, VGS = 0 V
-
-
25
μA
VDS = 160V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 5.4 Ab
-
-
0.40
Forward Transconductance
gfs
VDS = 50 V, ID = 5.4 Ab
3.8
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-800
-
pF
Output Capacitance
Coss
-240
-
Reverse Transfer Capacitance
Crss
-76
-
Total Gate Charge
Qg
VGS = 10 V
ID = 5.9 A, VDS = 160 V
see fig. 6 and 13b
--
43
nC
Gate-Source Charge
Qgs
--
7.0
Gate-Drain Charge
Qgd
--
23
Turn-On Delay Time
td(on)
VDD = 100 V, ID = 5.9 A
Rg = 12 , RD= 16 
see fig. 10b
-9.4
-
ns
Rise Time
tr
-28
-
Turn-Off Delay Time
td(off)
-39
-
Fall Time
tf
-20
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5
-
nH
Internal Source Inductance
LS
-7.5
-
D
S
G


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