BCX70G datasheet(2/3 Pages) CDIL

Numer części	BCX70G

Szczegółowy opis	SILICON PLANAR EPITAXIAL TRANSISTORS

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Producent	CDIL [Continental Device India Limited]

Strona internetowa	http://www.cdilsemi.com

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Continental Device India Limited

Data Sheet

Page 2 of 3

Collector current (d.c.)

IC

max.

200 mA

Base current

lB

max.

50 mA

Total power dissipation up to Tamb = 25 °C

Ptot

max.

250 mW

Storage temperature

Tstg

–55 to +150 °C

Junction temperature

Tj

max.

150 ° C

THERMAL RESISTANCE

From junction to ambient

Rth j–a =

500 K/W

CHARACTERISTICS

Tamb: 25 °C unless otherwise specified

Collector–emitter cut–off current

VBE = 0; VCE = 45 V

ICES

<20 nA

VBE = 0; VCE = 45 V; Tamb = 150 °C

ICES

<20 mA

Emitter–base cut–off current

IC = 0; VEB = 4 V

IEB0

<20 nA

Saturation voltages

at IC = 10 mA; IB = 0,25 mA

VCEsat 0,05 to 0,35 V

VBEsat 0,6 to 0,85 V

at IC = 50 mA; IB = 1,25 mA

VCEsat 0,1 to 0,55 V

VBEsat 0,7 to 1,05 V

Transition frequency at f = 100 MHz D

>

125 MHz

IC = 10 mA; VCE = 5 V

fT

typ.

250 MHz

Collector capacitance at f = 1 MHz

IE = Ie = 0; VCB = 10 V

Cc

typ.

2,5 pF

Emitter capacitance at f = 1 MHz

IC = Ic = 0; VEB = 0,5 V

Ce

typ.

8 pF

Noise figure at RS = 2 kW ,

typ.

2 dB

IC = 200 mA; VCE = 5 V; f = 1 kHz; B = 200 Hz

F

<

6 dB

BCX70G 70H

70J

70K

D.C. current gain

VCE = 5V; lC = 10mAhFE

>

—

40

30

100

VCE = 5 V; IC = 2 mA

hFE

>

120

180

250

380

<

220

310

460

630

VCE = 1 V; IC = 50 mA

hFE

>

50

70

90

100

Small-signal current gain

>

125

175

250

350

VCE = 5 V; IC = 2 mA; f = 1 kHz

hfe

<

250

350

500

700

Output admittance

VCE = 5 V; IC = 2 mA; f = 1 kHz

hoe

typ.

18

24

30

50 mS

Base-emitter voltage

0,55 to 0.75

V

VCE = 5 V; IC = 2 mA

VBE

typ.

0,65

V

VCE = 5 V; IC = 10 mAVBE

typ.

0,52

V

VCE = 1 V; IC = 50 mA

VBE

typ.

0,78

V

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