BC856 datasheet(2/3 Pages) CDIL

Numer części	BC856

Szczegółowy opis	SILICON PLANAR EPITAXIAL TRANSISTORS

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Producent	CDIL [Continental Device India Limited]

Strona internetowa	http://www.cdilsemi.com

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Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

BC856 BC857 BC858

Collector–base voltage (open emitter)

–VCBO

max.

80

50

30 V

Collector–emitter voltage (+VBE = 1 V)

–VCEX

max.

80

50

30 V

Collector–emitter voltage (open base)

–VCEO

max.

65

45

30 V

Emitter–base voltage (open collector)

–VEBO

max.

5

5 V

Collector current (d.c.)

–IC

max.

100

mA

Collector current (peak value)

–ICM

max.

200

mA

Emitter current (peak value)

IEM

max.

200

mA

Base current (peak value)

–IBM

max.

200

mA

Total power dissipation

up to Tamb: 60 °C

Ptot

max.

250

mW

Storage temperature

Tstg

–55 to +150

°C

Junction temperature

Tj

max.

150

°C

THERMAL CHARACTERISTICS

Tj = Px (Rth j–t + Rth t–s + Rth s–a) + Tamb

Thermal resistance

From junction to tab

Rth j–t

=60

K/W

From tab to soldering points

Rth t–s

=

280

K/W

From soldering points to ambient

Rth s–a

=90

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector cut–off current

IE = 0; –VCB = 30V;

Tj = 25°C

–ICBO

typ.

1

nA

<15

nA

Tj = 150° C

–ICBO

<4

m

A

Base–emitter voltage

–IC = 2 mA; –VCE = 5 V

–VBE

typ.

650

mV

600 to 750

mV

–IC = 10 mA; –VCE = 5 V

–VBE

<

820

mV

Saturation voltages

–IC = 10 mA; –IB = 0,5 mA

–VCEsat

typ.

75

mV

<

300

mV

–VBEsat

typ.

700

mV

–IC = 100 mA; –IB = 5 mA

–VCEsat

typ.

250

mV

<

650

mV

–VBEsat

typ.

850

mV

Knee voltage

–IC = 10 mA; –IB = value for which

–IC = 11 mA at –VCE = 1 V

–VCEK

typ.

250

mV

<

600

mV

BC856 BC857

BC858

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