STF20N65M5 datasheet(5/21 Pages) STMICROELECTRONICS

Numer części	STF20N65M5

Szczegółowy opis	N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

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STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5

Electrical characteristics

Doc ID 022865 Rev 2

5/21

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(v)

tr(v)

tf(i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

VDD = 400 V, ID = 12 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 19 and

Figure 22)

-

43

7.5

11.5

-

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

-

18

72

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 18 A, VGS = 0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 18 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 22)

-

288

4

27

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 18 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 22)

-

342

4.7

28

ns

µC

A

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