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2SK2523-01 Arkusz danych(PDF) 1 Page - Fuji Electric

Numer części 2SK2523-01
Szczegółowy opis  N-channel MOS-FET
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Producent  FUJI [Fuji Electric]
Strona internetowa  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK2523-01 Arkusz danych(HTML) 1 Page - Fuji Electric

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2SK2523-01
N-channel MOS-FET
FAP-II Series
450V
1Ω
9A
60W
> Features
> Outline Drawing
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
VGS = ± 30V Guarantee
-
Avalanche Proof
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
-
Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V DS
450
V
Drain-Gate-Voltage (RGS=20K
Ω)
V DGR
450
V
Continous Drain Current
I D
9
A
Pulsed Drain Current
I D(puls)
36
A
Gate-Source-Voltage
V GS
±30
V
Max. Power Dissipation
P D
60
W
Operating and Storage Temperature Range
T ch
150
°C
T stg
-55 ~ +150
°C
-
Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown-Voltage
V (BR)DSS
ID=1mA
VGS=0V
450
V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
2,5
3,0
3,5
V
Zero Gate Voltage Drain Current
I DSS
VDS=450V
Tch=25°C
500
µA
VGS=0V
Tch=125°C
1,0
mA
Gate Source Leakage Current
I GSS
VGS=±30V
VDS=0V
10
100
nA
Drain Source On-State Resistance
R DS(on)
ID=4,5A
VGS=10V
0,87
1,0
Forward Transconductance
g fs
ID=4,5A
VDS=25V
3,0
6,6
S
Input Capacitance
C iss
VDS=25V
1150
1700
pF
Output Capacitance
C oss
VGS=0V
130
200
pF
Reverse Transfer Capacitance
C rss
f=1MHz
50
75
pF
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
20
30
ns
t r
ID=9A
50
75
ns
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
60
90
ns
t f
RGS=10
35
55
ns
Avalanche Capability
I AV
L = 100µH
Tch=25°C
9,0
A
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
1,1
1,65
V
Reverse Recovery Time
t rr
IF=IDR VGS=0V
550
ns
Reverse Recovery Charge
Q rr
-dIF/dt=100A/µs Tch=25°C
3,9
µC
-
Thermal Characteristics
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Thermal Resistance
R th(ch-a)
channel to air
75
°C/W
R th(ch-c)
channel to case
2,08
°C/W


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