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STP200N6F3 Arkusz danych(PDF) 4 Page - STMicroelectronics |
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STP200N6F3 Arkusz danych(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STB200N6F3, STI200N6F3, STP200N6F3 4/16 Doc ID 15606 Rev 2 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 60 V IDSS Zero gate voltage drain current (VGS = 0) VDS= max rating, VDS= max rating,@125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ± 200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 60 A D²PAK TO-220, I²PAK 3 3.3 3.5 3.8 m Ω m Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1MHz, VGS = 0 - 6265 1295 43 - pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 30 V, ID = 60 A RG =4.7 Ω VGS = 10 V (see Figure 15, Figure 20) - 26 75 86 14 - ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 30 V, ID = 120 A, VGS = 10 V, (see Figure 16) - 101 36 25.2 - nC nC nC |
Podobny numer części - STP200N6F3 |
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Podobny opis - STP200N6F3 |
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