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2SK2870-01L Arkusz danych(PDF) 2 Page - Fuji Electric |
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2SK2870-01L Arkusz danych(HTML) 2 Page - Fuji Electric |
2 / 3 page N-channel MOS-FET 2SK2870-01L,S 450V 1,2Ω ±8A 50W FAP-IIS Series > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics ↑ ID=f(VDS); 80µs pulse test; TC=25°C ↑ RDS(on) = f(Tch): ID=4A; VGS=10V ↑ ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C 1 2 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch ↑ RDS(on)=f(ID); 80µs pulse test;TC=25°C ↑ gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C ↑ VGS(th)=f(Tch); ID=1mA; VDS=VGS 4 5 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitances vs. VDS Typical Gate Charge Characteristic Forward Characteristics of Reverse Diode ↑ C=f(VDS); VGS=0V; f=1MHz ↑ VGS=f(Qg): ID=8A; Tc=25°C ↑ ↑ IF=f(VSD); 80µs pulse test; VGS=0V 7 8 9 VDS [V] → Qg [nC] → VSD [V] → Avalanche Energy Derating Safe operation area Eas=f(starting Tch): Vcc=45V; IAV<=8A ID=f(VDS): D=0,01, Tc=25°C ↑ Transient Thermal impedance ↑ 10 ↑ 12 Zthch=f(t) parameter:D=t/T Starting Tch [°C] → VDS [V] → t [s] → This specification is subject to change without notice! |
Podobny numer części - 2SK2870-01L |
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Podobny opis - 2SK2870-01L |
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