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STP100N10F7 Arkusz danych(PDF) 5 Page - STMicroelectronics |
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STP100N10F7 Arkusz danych(HTML) 5 Page - STMicroelectronics |
5 / 23 page DocID023737 Rev 4 5/23 STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I SD Source-drain current - 80 A I SDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 320 A V SD (2) 2. Pulsed: pulse duration=300 μs, duty cycle 1.5% Forward on voltage I SD = 80 A, V GS =0 - 1.2 V t rr Reverse recovery time I SD = 80 A, di/dt = 100 A/μs, V DD =80 V, T j =150 °C -77 ns Q rr Reverse recovery charge - 146 nC I RRM Reverse recovery current - 4 A |
Podobny numer części - STP100N10F7 |
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Podobny opis - STP100N10F7 |
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