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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ADS58C48 Arkusz danych(PDF) 5 Page - Texas Instruments |
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ADS58C48 Arkusz danych(HTML) 5 Page - Texas Instruments |
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5 / 71 page  ADS58C48 www.ti.com SLAS689 – MAY 2010 ELECTRICAL CHARACTERISTICS Typical values are at 25°C, AVDD = 1.8 V, DRVDD = 1.8 V, sampling frequency = 200 MSPS, 50% clock duty cycle, –1 dBFS differential analog input, LVDS and CMOS interfaces unless otherwise noted. MIN and MAX values are across the full temperature range TMIN = –40°C to TMAX = 85°C, AVDD = 1.8 V, DRVDD = 1.8 V PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Resolution 11 bits ANALOG INPUTS Differential input voltage range 2 Vpp Differential input resistance (at 200 MHz, see 0.75 k Ω Figure 52) Differential input capacitance (at 200 MHz, see 3.7 pF Figure 53) Analog input bandwidth 550 MHz Analog input common mode current (per input pin 0.8 µA/MSPS of each channel) VCM common mode voltage output 0.95 V VCM output current capability 4 mA POWER SUPPLY IAVDD Analog supply current 290 330 mA IDRVDD 350-mV LVDS swing with 100- Ω Output buffer supply current LVDS interface 207 230 mA external termination after reset. Analog power 522 mW Digital power LVDS interface 373 mW Global power down 30 mW ELECTRICAL CHARACTERISTICS Typical values are at 25°C, AVDD = 1.8 V, DRVDD = 1.8 V, sampling frequency = 200 MSPS, 50% clock duty cycle, –1 dBFS differential analog input, LVDS and CMOS interfaces unless otherwise noted. MIN and MAX values are across the full temperature range TMIN = –40°C to TMAX = 85°C, AVDD = 1.8 V, DRVDD = 1.8 V PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DC ACCURACY DNL Differential non-linearity Fin = 170 MHz –0.9 1.2 LSB INL Integral non-linearity Fin = 170 MHz –2.0 ±1.0 2.0 LSB Specified across devices and across channels Offset error –25 25 mV within a device There are two sources of gain error – internal reference inaccuracy and channel gain error Gain error due to internal reference Specified across devices and across channels –2.5 2.5 %FS inaccuracy alone within a device Specified across devices and across channels Gain error of channel alone(1) –0.1% –1.0% within a device Channel gain error temperature 0.001 Δ%/°C coefficient (1) This is specified by design and characterization; it is not tested in production. Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s) :ADS58C48 |
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