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SI5459DU-T1 Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SI5459DU-T1 Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Si5459DU www.vishay.com Vishay Siliconix S14-0779-Rev. B, 14-Apr-14 1 Document Number: 65017 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P-Channel 20 V (D-S) MOSFET Ordering Information: Si5459DU-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •Load switch •HDD DC/DC Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 72 °C/W. e. Package limited. f. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. PRODUCT SUMMARY VDS (V) RDS(on) ( Ω)ID (A) a Qg (TYP.) -20 0.052 at VGS = -4.5 V -8 e 8 0.082 at VGS = -2.5 V -7.5 PowerPAK® ChipFET® Single Bottom View D 7 D 6 S 5 D 8 D 7 D 6 S 5 8 2 D 3 D 4 G 1 D Top View 1 3.0 mm 1 30 mm S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID -8 e A TC = 70 °C -8 e TA = 25 °C -6.7 b, c TA = 70 °C -5.3 b, c Pulsed Drain Current (10 μs Pulse Width) IDM -20 Source-Drain Current Diode Current TC = 25 °C IS -8 e TA = 25 °C -2.9 b, c Maximum Power Dissipation TC = 25 °C PD 10.9 W TC = 70 °C 7 TA = 25 °C 3.5 b, c TA = 70 °C 2.2 b, c Operating Junction and Storage Temperature Range TJ, Tstg -50 to 150 °C Soldering Recommendations (Peak Temperature) d, e 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT TYPICAL MAXIMUM Maximum Junction-to-Ambient b, d t ≤ 10 s RthJA 30 36 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 9.5 11.5 |
Podobny numer części - SI5459DU-T1 |
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Podobny opis - SI5459DU-T1 |
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