SI5459DU-T1 datasheet(1/9 Pages) VISHAY

Numer części	SI5459DU-T1

Szczegółowy opis	P-Channel 20 V (D-S) MOSFET

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Si5459DU

www.vishay.com

Vishay Siliconix

S14-0779-Rev. B, 14-Apr-14

1

Document Number: 65017

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 20 V (D-S) MOSFET

Ordering Information:

Si5459DU-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• TrenchFET® power MOSFET

• 100 % Rg tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•Load switch

•HDD DC/DC

Notes

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 72 °C/W.

e. Package limited.

f. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

g. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

VDS (V)

RDS(on) (

Ω)ID (A) a

Qg (TYP.)

-20

0.052 at VGS = -4.5 V

-8 e

8

0.082 at VGS = -2.5 V

-7.5

PowerPAK® ChipFET® Single

Bottom View

D

7

D

6

S

5

D

8

D

7

D

6

S

5

8

2

D

3

D

4

G

1

D

Top View

1

3.0

mm

1

30

mm

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

-8 e

A

TC = 70 °C

-8 e

TA = 25 °C

-6.7 b, c

TA = 70 °C

-5.3 b, c

Pulsed Drain Current (10 μs Pulse Width)

IDM

-20

Source-Drain Current Diode Current

TC = 25 °C

IS

-8 e

TA = 25 °C

-2.9 b, c

Maximum Power Dissipation

TC = 25 °C

PD

10.9

W

TC = 70 °C

7

TA = 25 °C

3.5 b, c

TA = 70 °C

2.2 b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

-50 to 150

°C

Soldering Recommendations (Peak Temperature) d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

TYPICAL

MAXIMUM

Maximum Junction-to-Ambient b, d

t

≤ 10 s

RthJA

30

36

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

9.5

11.5

Podobny numer części - SI5459DU-T1

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