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TPD2E2U06 Arkusz danych(PDF) 2 Page - Texas Instruments

Numer części TPD2E2U06
Szczegółowy opis  Dual-Channel High-Speed ESD Protection Device
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Producent  TI1 [Texas Instruments]
Strona internetowa  http://www.ti.com
Logo TI1 - Texas Instruments

TPD2E2U06 Arkusz danych(HTML) 2 Page - Texas Instruments

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TPD2E2U06
SLLSEG9A – JUNE 2013 – REVISED JUNE 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
IPP
Peak pulse current (tp = 8/20
μs)
5.5(1)
A
PPP
Peak pulse power (tp = 8/20
μs)
85(1)
W
IEC 61000-4-2 air-gap ESD
±30(1)
kV
IEC 61000-4-2 contact ESD
±25(1)
kV
Operating temperature
–40
125
°C
Storage temperature
–65
155
°C
(1)
Measured at 25°C.
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VRWM
Reverse stand-off voltage
IIO < 10 µA
5.5
V
VCLAMP
IO to GND
IPP = 1 A, TLP
(1)
9.7
V
IPP = 5 A, TLP
(1)
12.4
VCLAMP
GND to IO
IPP = 1 A, TLP
(1)
1.9
V
IPP = 5 A, TLP
(1)
4
RDYN
Dynamic resistance
IO to GND(2)
0.5
Ω
RDYN
Dynamic resistance
GND to IO(2)
0.25
Ω
CL
Line capacitance
f = 1 MHz, VBIAS = 2.5 V
(3)
1.5
1.9
pF
CCROSS
Channel-to-channel input
Pin 4 = 0 V, f = 1 MHz, VBIAS = 2.5 V, between
0.02
0.03
pF
capacitance
channel pins(3)
CIO-TO-GND
Variation of channel input
Pin 4 = 0 V, f = 1 MHz, VBIAS = 2.5 V,
0.03
0.1
pF
capacitance
channel_x pin to GND – channel_y pin to GND (3)
VBR
Break-down voltage
IIO = 1 mA
6.5
8.5
V
ILEAK
Leakage current
VIO = 2.5 V
1
10
nA
(1)
Transmission Line Pulse with 10-ns rise time, 100-ns width.
(2)
Extraction of RDYN Using least squares fit of TLP characteristics between I = 20 A and I = 30 A.
(3)
Measured at 25°C.
2
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Copyright © 2013, Texas Instruments Incorporated
Product Folder Links: TPD2E2U06


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