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BDW47 Arkusz danych(PDF) 2 Page - Savantic, Inc. |
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BDW47 Arkusz danych(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors BDW47 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA, IB=0 -100 V VCEsat-1 Collector-emitter saturation voltage IC=-5A ,IB=-10mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-10A ,IB=-50mA -3.0 V VBE Base-emitter on voltage IC=-10A ; VCE=-4V -3.0 V ICBO Collector cut-off current VCB=-100V, IE=0 -1.0 mA ICEO Collector cut-off current VCE=-50V, IB=0 -2.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE-1 DC current gain IC=-5A ; VCE=-4V 1000 hFE-2 DC current gain IC=-10A ; VCE=-4V 250 fT Transition frequency IC=-3A ; VCE=-3V;f=1MHz 4.0 MHz COB Output capacitance IE=0 ; VCB=-10V;f=0.1MHz 300 pF |
Podobny numer części - BDW47 |
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