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2SK2515 Arkusz danych(PDF) 1 Page - NEC |
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2SK2515 Arkusz danych(HTML) 1 Page - NEC |
1 / 8 page MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK2515 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-Resistance RDS (on)1 = 9 m Ω (VGS = 10 V, ID = 25 A) RDS (on)2 = 14 m Ω (VGS = 4 V, ID = 25 A) • Low Ciss Ciss = 3 400 pF TYP. • Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID (DC) ±50 A Drain Current (pulse)* ID (pulse) ±200 A Total Power Dissipation (Tc = 25 ˚C) PT1 150 W Total Power Dissipation (TA = 25 ˚C) PT2 3.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C * PW ≤ 10 µs, Duty Cycle ≤ 1 % 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D10301EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan PACKAGE DIMENSIONS (in millimeter) © 1995 DATA SHEET 1.0±0.2 123 1. Gate 2. Drain 3. Source 4. Fin (Drain) MP-88 4 15.7 MAX. 3.2±0.2 2.8±0.1 0.6±0.1 2.2±0.2 5.45 5.45 4.7 MAX. 1.5 Body Diode Source Drain Gate Gate Protection Diode The diode connected between the gate and source of the transis- tor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally re- quired if a voltage exceeding the rated voltage may be applied to this device. |
Podobny numer części - 2SK2515 |
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Podobny opis - 2SK2515 |
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