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F00265E Arkusz danych(PDF) 2 Page - Solid States Devices, Inc |
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F00265E Arkusz danych(HTML) 2 Page - Solid States Devices, Inc |
2 / 2 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00265E DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFL044J Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS=0 V, ID=250 A BVDSS 60 –– –– Volts Drain to Source On State Resistance (VGS=5 V, ID=18A RDS(on)1 –– 0.032 0.036 Drain to Source On Resistance (VGS=4 V, ID= 15A RDS(on)2 0.034 0.040 Gate Threshold Voltage (VDS=VGS, ID= 250 A VGS(th) 1.0 1.5 2.0 V Forward Transconductance (VDS>10V, IDS=18A gfs 22 35 –– S(mho) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=150ºC) IDSS –– –– –– –– 25 250 A Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS –– –– –– –– +100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS= 5 Volts 80% rated VDS ID= 15 A Qg Qgs Qgd –– –– –– 45 15 15 66 20 43 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDD=50% Rated VDS ID= 15 A RG= 4.6 RD= 0.56 td(on) tr td(off) tf –– –– –– –– 30 10 70 25 –– –– –– –– nsec Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) VSD –– 1.2 2.5 V Diode Reverse Recovery Time TJ=25ºC, IF= 10 A di/dt=100A/ sec trr –– 100 180 nsec Input Capacitance Input Capacitance Reverse Transfer Capacitance VGS=0 Volts VDS=25 Volts f=1 MHz Ciss Coss Crss –– –– –– 3300 1100 50 –– –– –– pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. |
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