2SK3110 datasheet(3/8 Pages) NEC

Numer części	2SK3110

Szczegółowy opis	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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Data Sheet D13333EJ1V0DS00

3

2SK3110

TYPICAL CHARACTERISTICS (TA = 25°C)

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

VDS

- Drain to Source Voltage - V

50

45

40

35

30

25

20

15

10

5

0

Pulsed

0

2

4

6

8

10

VGS = 30 V

VGS = 10 V

FORWARD TRANSFER CHARACTERISTICS

VGS

- Gate to Source Voltage - V

100

10

1

0.1

0.01

0.001

Pulsed

0

VDS = 10 V

1

2

34

5

67

8

910 11 12

Tch = 125˚C

75˚C

25˚C

-25˚C

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

VDS = 10 V

ID = 1 mA

− 50

50

100

0

150

5.0

4.5

4.0

3.5

3.0

2.5

2.0

− 25

25

75

125

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

ID- Drain Current - A

0.1

100

10

1

0.1

0.01

1

100

0.01

10

VDS =10 V

Pulsed

Tch = -25˚C

Tch = 25˚C

Tch = 75˚C

Tch = 125˚C

Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

VGS - Gate to Source Voltage - V

500

450

400

350

300

250

200

150

100

50

0

24

6

810 12

14

16

18

20

ID = 14 A

7.0 A

2.8 A

DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT

ID - Drain Current - A

1

10

100

Pulsed

300

250

200

150

100

50

0

0.1

VGS = 10 V

VGS = 30 V

5

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