Data Sheet D14059EJ1V0DS00

6

2SK3298

SINGLE AVALANCHE ENERGY vs.

INDUCTIVE LOAD

100

µ

1 m

10 m

100

L - Inductive Load - H

1.0

10

0.1

10

µ

Ω

E

mJ

SINGLE AVALANCHE ENERGY

DERATING FACTOR

75

150

125

120

100

80

60

40

20

0

50

100

25

Ω

→ 0 V

≤ 7.5 A

PACKAGE DRAWING (Unit : mm)

Isolated TO-220 (MP-45F)

EQUIVALENT CIRCUIT

Remark

Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

2.54 TYP.

2.54 TYP.

12 3

1.Gate

2.Drain

3.Source

φ

Body

Diode

Source (S)

Drain (D)

Gate (G)