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1N4688 Arkusz danych(PDF) 1 Page - General Semiconductor

Numer części 1N4688
Szczegółowy opis  ZENER DIODES
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Producent  GE [General Semiconductor]
Strona internetowa  http://www.vishay.com
Logo GE - General Semiconductor

1N4688 Arkusz danych(HTML) 1 Page - General Semiconductor

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SYMBOL
MIN.
MAX.
UNIT
Thermal Resistance
R
ΘJA
300(1)
°C/W
Junction to Ambient Air
Forward Voltage
VF
1.5
Volts
at IF = 100 mA
SYMBOL
VALUE
UNIT
Zener Current (see Table “Characteristics”)
Power Dissipation at TL = 75°C, 3/8” from case
Ptot
500
mW
Maximum Junction Temperature
Tj
175
°C
Storage Temperature Range
TS
– 65 to +175
°C
12/2/98
FEATURES
♦ Silicon Planar Zener Diodes
♦ Standard Zener voltage tolerance is ± 5%.
Other tolerances are available
upon request.
♦ High temperature soldering guaranteed:
250°C/10 seconds, 0.375” (9.5mm) lead length.
♦ These diodes are also available in SOD-123 case
with the type designation MMSZ4681...MMSZ4717
and SOT-23 case with the type designation
MMBZ4681...MMBZ4717.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
Terminals: Solderable, per MIL-STD-750, method 2026.
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
1N4681 THRU 1N4717
ZENER DIODES
max. ∅
Cathode
.020 (0.52)
Mark
max. ∅.079 (2.0)
DO-35
Dimensions are in inches and (millimeters)
NOTES:
(1) Valid provided that leads at a distance of 3/8” mm from case are kept at ambient temperature.
ADVANCED INFORMATION


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