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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ADS1158 Arkusz danych(PDF) 2 Page - Texas Instruments |
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ADS1158 Arkusz danych(HTML) 2 Page - Texas Instruments |
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2 / 53 page  ADS1158 SBAS429D – JUNE 2008 – REVISED MARCH 2011 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. ABSOLUTE MAXIMUM RATINGS Over operating free-air temperature range, unless otherwise noted. (1) ADS1158 UNIT AVDD to AVSS –0.3 to +5.5 V AVSS to DGND –2.8 to +0.3 V DVDD to DGND –0.3 to +5.5 V Input current 100, momentary mA Input current 10, continuous mA Analog input voltage AVSS – 0.3 to AVDD + 0.3 V Digital input voltage to DGND –0.3 to DVDD + 0.3 V Maximum junction temperature +150 °C Operating temperature range –40 to +105 °C Storage temperature range –60 to +150 °C (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. 2 Submit Documentation Feedback Copyright © 2008–2011, Texas Instruments Incorporated Product Folder Link(s): ADS1158 |
Podobny numer części - ADS1158_14 |
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Podobny opis - ADS1158_14 |
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