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2SK3430 Arkusz danych(PDF) 1 Page - NEC |
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2SK3430 Arkusz danych(HTML) 1 Page - NEC |
1 / 4 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1999,2000 MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PRELIMINARY DATA SHEET Document No. D14599EJ1V0DS00 (1st edition) Date Published March 2000 NS CP(K) Printed in Japan DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3 m Ω MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 m Ω MAX. (VGS = 4 V, ID = 40 A) • Low Ciss: Ciss = 2800 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 40 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±80 A Drain Current (pulse) Note1 ID(pulse) ±200 A Total Power Dissipation (TC = 25°C) PT 84 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 37 A Single Avalanche Energy Note2 EAS 137 mJ Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 1.49 °C/W Channel to Ambient Rth(ch-A) 83.3 °C/W ORDERING INFORMATION PART NUMBER PACKAGE 2SK3430 TO-220AB 2SK3430-S TO-262 2SK3430-Z TO-220SMD (TO-220AB) (TO-262) (TO-220SMD) 5 5 5 The mark 5 shows major revised points. 5 5 |
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