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74HCT2G66GT Arkusz danych(PDF) 8 Page - NXP Semiconductors

Numer części 74HCT2G66GT
Szczegółowy opis  Dual single-pole single-throw analog switch
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Strona internetowa  http://www.nxp.com
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74HCT2G66GT Arkusz danych(HTML) 8 Page - NXP Semiconductors

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74HC_HCT2G66
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 10 — 3 October 2013
8 of 23
NXP Semiconductors
74HC2G66; 74HCT2G66
Dual single-pole single-throw analog switch
10.3 ON resistance test circuit and graphs
11. Dynamic characteristics
RON =VSW / ISW.Tamb = 25 C.
Fig 8.
Test circuit for measuring ON resistance
Fig 9.
Typical ON resistance as a function of
input voltage
001aaj467
VI
VIH
VCC
GND
nZ
nY
nE
VSW
ISW
20
40
60
RON
(
Ω)
0
VI (V)
010
8
46
2
mnb006
VCC = 4.5 V
VCC = 6.0 V
VCC = 9.0 V
Table 9.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); For test circuit see Figure 12.
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min
Typ[1]
Max
Min
Max
74HC2G66
tpd
propagation delay nY to nZ or nZ to nY; RL =  ;
see Figure 10
[2]
VCC = 2.0 V
-
6.5
65
-
80
ns
VCC = 4.5 V
-
2
13
-
15
ns
VCC = 6.0 V
-
1.5
11
-
14
ns
VCC = 9.0 V
-
1.2
10
-
12
ns
ten
enable time
nE to nY or nZ; see Figure 11
[2]
VCC = 2.0 V
-
40
125
-
150
ns
VCC = 4.5 V
-
12
29
-
30
ns
VCC = 6.0 V
-
10
21
-
26
ns
VCC = 9.0 V
-
7
16
-
20
ns
tdis
disable time
nE to nY or nZ; see Figure 11
[2]
VCC = 2.0 V
-
21
145
-
175
ns
VCC = 4.5 V
-
12
29
-
35
ns
VCC = 6.0 V
-
11
28
-
33
ns
VCC = 9.0 V
-
10
23
-
27
ns
CPD
power dissipation
capacitance
VI =GND to VCC
[3]
-9-
-
-
pF


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