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2SA1617 Arkusz danych(PDF) 2 Page - Hitachi Semiconductor |
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2SA1617 Arkusz danych(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page 2SA1617 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO –55 V Collector to emitter voltage V CEO –50 V Emitter to base voltage V EBO –5 V Collector current I C –100 mA Collector power dissipation P C 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO –55 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO –50 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –0.5 µAV CB = –30 V, IE = 0 Emitter cutoff current I EBO — — –0.5 µAV EB = –2 V, IC = 0 DC current transfer ratio h FE* 1 100 — 320 V CE = –12 V, IC = –2 mA Collector to emitter saturation voltage V CE(sat) — — –0.2 V I C = –10 mA, IB = –1 mA Base to emitter voltage V BE — — –0.8 V V CE = –12 V, IC = –2 mA Note: 1. The 2SA1617 is grouped by h FE as follows. Grade B C Mark VIB VIC h FE 100 to 200 160 to 320 See charcteristic curves of 2SA1031 |
Podobny numer części - 2SA1617 |
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