2SC2547 datasheet(3/8 Pages) HITACHI

Numer części	2SC2547

Szczegółowy opis	Silicon NPN Epitaxial

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Producent	HITACHI [Hitachi Semiconductor]

Strona internetowa	http://www.renesas.com/eng

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2SC2545, 2SC2546, 2SC2547

3

Electrical Characteristics (Ta = 25°C)

2SC2545

2SC2546

2SC2547

Item

Symbol Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base

breakdown voltage

V

(BR)CBO

60

—

90

—

120

—

V

I

C = 10 µA, IE = 0

Collector to emitter

breakdown voltage

V

(BR)CEO

60

—

90

—

120

—

V

I

C = 1 mA,

R

BE = ∞

Emitter to base

breakdown voltage

V

(BR)EBO

5—

—

5

—

5—

—

V

I

E = 10 µA, IC = 0

Collector cutoff current

I

CBO

—

0.1

—

0.1

—

0.1

µAV

CB = 50 V, IE = 0

Emitter cutoff current

I

EBO

—

0.1

—

0.1

—

0.1

µAV

EB = 2 V, IC = 0

DC current transfer ratio

h

FE*

1

250

—

1200 250

—

1200

250

—

800

V

CE = 12 V,

I

C = 2 mA

Collector to emitter

saturation voltage

V

CE(sat)

—

0.2

—

0.2

—

0.2

V

I

C = 10 mA,

I

B = 1 mA

Base to emitter voltage

V

BE

—

0.6

—

0.6

—

0.6

—

V

CE = 12 V,

I

C = 2 mA

Gain bandwidth product f

T

—90

—

—90

—

—90

—

MHz V

CE = 12 V,

I

C = 2 mA

Collector output

capacitance

Cob

—

3.0

—

3.0

—

3.0

—

pF

V

CB = 10 V, IE = 0,

f = 1 MHz

Noise voltage referred

input

e

n

—

0.5

—

0.5

—

0.5

—

nV/

√Hz

V

CE = 6V,

I

C = 10 mA,

f = 1 kHz,

R

g = 0, ∆f = 1Hz

Note:

1. The 2SC2545, 2SC2546 and 2SC2547 are grouped by h

FE as follows.

DE

F

2SC2545, 2SC2546

250 to 500

400 to 800

600 to 1200

2SC2547

250 to 500

400 to 800

—

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2SC2547 Arkusz danych(PDF) 3 Page - Hitachi Semiconductor

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