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STB32NM50N Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STB32NM50N Arkusz danych(HTML) 1 Page - STMicroelectronics |
1 / 21 page This is information on a product in full production. August 2012 Doc ID 023436 Rev 1 1/21 21 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220, TO-247 packages Datasheet — production data Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Order codes VDS RDS(on) max. ID PTOT STB32NM50N STF32NM50N STP32NM50N STW32NM50N 500 V 0.13 Ω 22 A 190 W 35 W 190 W 190 W 1 2 3 TO-247 TO-220 1 2 3 TO-220FP 1 3 TAB 2 D²PAK 1 2 3 TAB Table 1. Device summary Order codes Marking Package Packaging STB32NM50N STF32NM50N STP32NM50N STW32NM50N 32NM50N D2PAK TO-220FP TO-220 TO-247 Tape and reel Tube Tube Tube www.st.com |
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