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2SD2104 Arkusz danych(PDF) 2 Page - Hitachi Semiconductor |
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2SD2104 Arkusz danych(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 2SD2104 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage V CBO 120 V Collector to emitter voltage V CEO 120 V Emitter to base voltage V EBO 7V Collector current I C 8A Collector peak current I C(peak) 12 A Collector power dissipation P C 2W P C* 1 25 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at T C = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 120 — — V I C = 0.1 mA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 120 — — V I C = 25 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 7— — V I E = 50 mA, IC = 0 Collector cutoff current I CBO —— 10 µAV CB = 100 V, IE = 0 I CEO — — 10 V CE = 100 V, RBE = ∞ DC current transfer ratio h FE 1000 — 20000 V CE = 3 V, IC = 4 A* 1 Collector to emitter saturation V CE(sat)1 — — 1.5 V I C = 4 A, IB = 8 mA* 1 voltage V CE(sat)2 — — 3.0 I C = 8 A, IB = 80 mA* 1 Base to emitter saturation V BE(sat)1 — — 2.0 V I C = 4 A, IB = 8 mA* 1 voltage V BE(sat)2 — — 3.5 I C = 8 A, IB = 80 mA* 1 Note: 1. Pulse test. |
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