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2SJ244 Arkusz danych(PDF) 4 Page - Hitachi Semiconductor

Numer części 2SJ244
Szczegółowy opis  Silicon P-Channel MOS FET
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Producent  HITACHI [Hitachi Semiconductor]
Strona internetowa  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ244 Arkusz danych(HTML) 4 Page - Hitachi Semiconductor

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2SJ244
4
-0.1
-0.2
-0.5
-1.0
-2
-5
-10
0.2
0.5
1.0
2
5
10
20
Drain Current
I
(A)
D
V
= -5 V
DS
Pulse Test
Ta = -25 °C
+25
+75
Forward Transfer Admittance vs.
Drain Current
-0.1
-0.2
-0.5
-1.0
-2
-5
0.1
0.2
0.5
1.0
2
5
10
Drain Current
I
(A)
D
V
= -4 V
GS
-2 V
-3 V
Pulse Test
Drain to Source on State Resistance vs.
Drain Current
-10
0-1
-3
-4
-5
-1.0
-0.8
-0.6
-0.4
-0.2
-2
Gate to Source Voltage
V
( V )
GS
I = -1 A
D
-0.5
-0.2
-0.1
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-25
0
25
50
75
100
1.0
0.8
0.6
0.4
0.2
Case Temperature Tc ( °C )
0
V
= -2.5 V
GS
-0.5 A
I
= -1 A
D
V
= -4 V
GS
I
= -1 A
D
-0.5 A
Pulse Test
Drain to Source on State Resistance vs.
Case Temperature


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