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ST10E4 Arkusz danych(PDF) 3 Page - Stanson Technology |
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ST10E4 Arkusz danych(HTML) 3 Page - Stanson Technology |
3 / 7 page ST10E4 N Channel Enhancement Mode MOSFET 3.0A 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com ST10E4 2013 . V1 3 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 100 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1 3 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±30 uA Zero Gate Voltage Drain Current IDSS VDS=80V,VGS=0V 1 uA VDS=80V,VGS=0V TJ=55℃ 10 Drain-source On-Resistance RDS(on) VGS=10V,ID=3.0A VGS=4.5V,ID=2.0A 153 168 160 180 mΩ Diode Forward Voltage VSD IS=1.7A,VGS=0V 1.0 V Dynamic Total Gate Charge Qg VDS=50V VGS=10V ID≡2.0A 10 15 nC Gate-Source Charge Qgs 1.9 Gate-Drain Charge Qgd 2.8 Input Capacitance Ciss VDS=30V VGS=0V F=1MHz 455 pF Output Capacitance Coss 43 Reverse Transfer Capacitance Crss 28 Turn-On Time td(on) tr VDD=30V RL=30Ω ID=1.0A VGEN=10V RG=6Ω 11 21 nS 10 19 Turn-Off Time td(off) tf 24 44 21 39 |
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