ST1004SRG datasheet(3/6 Pages) STANSON

Numer części	ST1004SRG

Szczegółowy opis	N Channel Enhancement Mode MOSFET

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ST1004SRG

N Channel Enhancement Mode MOSFET

2.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST1004SRG 2013. V1

ELECTRICAL CHARACTERISTICS

( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ Max Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=250uA

100

V

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

1.0

2.5

V

Gate Leakage Current

IGSS

VDS=0V, VGS=±20V

±100

nA

VDS=80V, VGS=0V

1

Zero Gate Voltage Drain

Current

IDSS

VDS=80V, VGS=0V

TJ=125℃

5

uA

On-State Drain Current

ID(on)

VDS≧5V,VGS=10V

3.0

A

Drain-source On-Resistance

RDS(on)

VGS=10V,ID=2.0A

VGS=4.5V,ID=1.0A

0.26

0.29

0.31

0.32

Ω

Forward Transconductance

gfs

VDS=5V,ID=3.6V

2.4

S

Diode Forward Voltage

VSD

IS=1.0A,VGS=0V

1.2

V

Dynamic

Total Gate Charge

Qg

9

13

Gate-Source Charge

Qgs

2

Gate-Drain Charge

Qgd

VDS=80V

VGS=10V

ID≡5.0A

1.4

nC

Input Capacitance

Ciss

508

Output Capacitance

Coss

29

Reverse Transfer

Capacitance

Crss

VDS=25V

VGS=0V

F=1MHz

16.5

pF

12

Turn-On Time

td(on)

tr

21.5

11.2

Turn-Off Time

td(off)

tf

VDD=50V

RL=10Ω

ID=3.0A

VGEN=10V

RG=3.3Ω

18.8

nS

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