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2SJ587 Arkusz danych(PDF) 4 Page - Hitachi Semiconductor |
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2SJ587 Arkusz danych(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SJ587 4 2.0 1.6 1.2 0.8 0.4 0 -2 -4 -6 -8 -10 -0.01 -0.05 -0.02 50 10 1.0 25 20 15 10 5 –40 0 40 80 120 160 0 -0.1 -25mA -10m A Pulse Test V = -4 V GS -2.5 V Pulse Test V = -4V GS -10m A, -25m A Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current I (A) D Static Drain to Sourceon State Resistance vs. Drain Current Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Forward TransferAdmittance vs. Drain Current I = -25m A D -2.5V I = -50mA D 0.05 2 5 20 0 -10m A Pulse Test -0.01 -0.1 0.5 0.1 0.01 Drain Current I (A) D -0.02 -0.05 0.005 0.02 0.05 0.2 VDS=-10V Pulse Test Tc = -25 °C 25 °C 75 °C |
Podobny numer części - 2SJ587 |
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Podobny opis - 2SJ587 |
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