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STP4189D Arkusz danych(PDF) 2 Page - Stanson Technology |
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STP4189D Arkusz danych(HTML) 2 Page - Stanson Technology |
2 / 9 page STP4189D P Channel Enhancement Mode MOSFET - 12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP4189D 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Pulsed Drain Current IDM -50 A Continuous Source Current (Diode Conduction) IS -20 A Power Dissipation TA=25℃ TA=70℃ PD 52.5 31 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 50 ℃/W |
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