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2SK1169 Arkusz danych(PDF) 4 Page - Hitachi Semiconductor |
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2SK1169 Arkusz danych(HTML) 4 Page - Hitachi Semiconductor |
4 / 9 page 2SK1169, 2SK1170 4 Power vs. Temperature Derating 150 100 50 0 50 100 150 Case Temperature TC (°C) Maximum Safe Operation Area 100 30 10 3 0.1 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) 1.0 0.3 2SK1170 2SK1169 Operation in this area is limited by RDS (on) 1 ms 10 µ s 100 µ s Ta = 25 °C PW = 10 ms (1Shot) DC Operation (T C = 25 °C) Typical Output Characteristics 50 30 20 10 0 10 20 30 50 Drain to Source Voltage VDS (V) 6 V 40 40 VGS = 4 V Pulse Test 5 V 10 V 7 V Typical Transfer Characteristics 20 16 8 4 0 2 468 10 Gate to Source Voltage VGS (V) 12 TC = 25°C 75°C –25°C VDS = 20 V Pulse Test |
Podobny numer części - 2SK1169 |
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Podobny opis - 2SK1169 |
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