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LS3N171 Arkusz danych(PDF) 1 Page - Micross Components

Numer części LS3N171
Szczegółowy opis  an enhancement mode N-Channel Mosfet
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Producent  MICROSS [Micross Components]
Strona internetowa  http://www.micross.com
Logo MICROSS - Micross Components

LS3N171 Arkusz danych(HTML) 1 Page - Micross Components

  LS3N171 Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
FEATURES 
DIRECT REPLACEMENT FOR INTERSIL LS3N171 
LOW DRAIN TO SOURCE RESISTANCE 
rDS(on) ≤ 200Ω 
FAST SWITCHING 
td(on) ≤ 3.0ns 
ABSOLUTE MAXIMUM RATINGS (Note 1) 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +150°C 
Operating Junction Temperature ‐55°C to +135°C 
Maximum Power Dissipation 
Continuous Power Dissipation  
300mW 
MAXIMUM CURRENT
Drain to Source  
30mA 
MAXIMUM VOLTAGES 
Drain to Gate 
±35V 
Drain to Source 
25V 
Peak Gate to Source  
±35V 
  
LS3N171 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BVDSS 
Drain to Source Breakdown Voltage 
25 
‐‐ 
‐‐ 
 
I= 10µA,   VGS = 0V 
VDS(on) 
Drain to Source “On” Voltage 
‐‐ 
‐‐ 
2.0 
                   I= 10mA,   VGS = 10V 
VGS(th) 
Gate to Source Threshold Voltage 
1.5 
‐‐ 
2.0 
VDS = 10V,    I= 10µA 
IGSS 
Gate Leakage Current 
‐‐ 
‐‐ 
10 
pA 
VGS = ‐35V,   VDS = 0V 
IDSS 
Drain Leakage Current “Off” 
‐‐ 
‐‐ 
10 
nA 
VGS = 10V,   VDS = 10V 
ID(on) 
Drain Current “On” 
10 
‐‐ 
‐‐ 
mA 
VGS = 10V,  VDS = 10V 
gfs 
Forward Transconductance 
1000 
‐‐ 
‐‐ 
µS 
VDS = 10V,    ID = 2mA ,   f = 1kHz 
rDS(on) 
Drain to Source “On” Resistance 
‐‐ 
‐‐ 
200 Ω 
VGS = 10V,   ID = 0A,   f = 1kHz 
Crss 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
1.3  
pF 
VDS = 0V,     VGS = 0V ,   f = 1MHz 
Ciss 
Input Capacitance 
‐‐ 
‐‐ 
VDS = 10V,     VGS = 0V ,   f = 1MHz 
Cdb 
Drain to Body Capacitance 
‐‐ 
‐‐ 
5.0 
VDB = 10V,   f = 1MHz 
  
 
 
 
 
 
SWITCHING CHARACTERISTICS                                                                                                                                      
SYMBOL 
CHARACTERISTIC 
MAX 
UNITS 
CONDITIONS 
td(on) 
Turn On Delay Time 
3  
ns 
 
VDD = 10V,  ID(on) = 10mA, VGS(on) = 10V, VGS(off) = 0V, R= 50Ω 
tr 
Turn On Rise Time 
10 
td(off) 
Turn Off Delay Time 
tf 
Turn Off Fall Time 
15 
The LS3N171 is an enhancement mode N-Channel Mosfet
LS3N171
N-CHANNEL MOSFET
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
TO-72 (Bottom View)
Available Packages:
LS3N171 in TO-72
LS3N171 in bare die.
Please contact Micross for full
package and die dimensions
* Body tied to case
Note 1 ‐ Absolute maximum ratings are limiting values above which LS3N171 serviceability may be impaired. 
LS3N171 Features:
Low ON Resistance
Low Capacitance
High Gain
High Gate Breakdown Voltage
Low Threshold Voltage
The LS3N171 is an enhancement mode N-Channel
Mosfet designed for use as a General Purpose amplifier
or switch
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
(See Packaging Information).


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