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2SK1667 Arkusz danych(PDF) 3 Page - Hitachi Semiconductor |
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2SK1667 Arkusz danych(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SK1667 3 80 60 40 20 0 50 100 150 200 Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS 1 310 100 300 1000 0.1 0.3 1 3 10 30 100 30 PW = 10 ms (1 shot) DC Operation (Tc = 25°C) 10 s µ 100 s µ 1 ms Ta = 25°C Maximum Safe Operation Area Operation in this area is limited by R (on) DS Drain to Source Voltage V (V) 0 2 4 6 8 10 14 8 12 16 20 DS Pulse Test 5.5 V 5 V 4.5 V 10 V 6 V V = 4 V GS Typical Output Characteristics Gate to Source Voltage V (V) 2 4 6 8 10 02 6 8 10 GS Tc = 75°C 25°C – 25°C V = 10 V Pulse Test DS 4 Typical Transfer Characteristics |
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