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2SK1808 Arkusz danych(PDF) 3 Page - Hitachi Semiconductor |
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2SK1808 Arkusz danych(HTML) 3 Page - Hitachi Semiconductor |
3 / 6 page 2SK1808 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 900 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µAV DS = 720 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) — 3.0 4.0 Ω I D = 2 A V GS = 10 V* 1 Forward transfer admittance |y fs| 1.7 2.7 — S I D = 2 A V DS = 10 V* 1 Input capacitance Ciss — 740 — pF V DS = 10 V Output capacitance Coss — 305 — pF V GS = 0 Reverse transfer capacitance Crss — 150 — pF f = 1 MHz Turn-on delay time t d(on) — 15 — ns I D = 2 A Rise time t r — 60 — ns V GS = 10 V Turn-off delay time t d(off) — 100 — ns R L = 15 Ω Fall time t f —80—ns Body to drain diode forward voltage V DF — 0.9 — V I F = 4 A, VGS = 0 Body to drain diode reverse recovery time t rr — 800 — ns I F = 4 A, VGS = 0, di F / dt = 100 A / µs Note 1. Pulse Test See characteristic curves of 2SK1340 |
Podobny numer części - 2SK1808 |
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Podobny opis - 2SK1808 |
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